Optical and electrical properties of (V2O5)1-x- (MoO3 )x thin films.

K V Madhuri, K Srinivasa Rao, S Uthanna, B S Naidu, O M Hussain


Thin films of (V2O5)1-x-(MoO3)x (0< x < 1) were prepared by electron beam evaporation technique in an oxygen partial pressure of 2 � 10 4 mbar and at a substrate temperature of 423 K. The optical absorption data in the range 300-1500 nm suggests that the optical bandgap increases with increase in the composition of x and shows a curvilinear behaviour. Electrical conductivity decreased with increase in the composition of x. The temperature dependence of electrical conductivity obeys T -1/4 law.etch mask is cheap and is easy to use. In the present work, PMMA is deposited on silicon substrate with a simple technique of spin-coating. The adhesion of spincoated film of PMMA on silicon wafer is an important parameter for its use as an etch mask, while etching in aqueous KOH solution for silicon micromachining. Pre- and posttreatments have been performed on silicon substrate and the mask layer to achieve greater adhesion of the mask material. Feasibility is demonstrated of the use of PMMA as etch mask.made to crystallize the thin films at as low a processing temperature as possible. The properties studied include dielectric measurements and hysteresis. Thin films of calcium-modified lead titanate (PCT) were also prepared by the sol gel technique and their pyroelectric characteristics were studied for use in infrared detectors.film was coated. These results show that the crystalline quality and deposition rate can be controlled over a wide range by this method.


(V2O5)1-x-(MoO3)x thin films; optical properties and electrical properties

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